High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

A dramatic improvement of inversion channel mobility in 4H-SiC MOSFETs was successfully achieved by utilizing the (112~0) face: 17 times higher (95.9 cm
²
/Vs) than that on the conventional (0001) Si-face (5.59 cm
²
/Vs). A low threshold voltage of MOSFETs on the (112~0) face indicates that the (112~0) MOS interface has fewer negative charges than the (0001) MOS interface. Small anisotropy of channel mobility in 4H-SiC MOSFETs (μ/sub (11~00)//μ/sub (0001)/=0.85) reflects the small anisotropy in bulk electron mobility.