Top gate graphene field effect transistor on flexible substrate by using one-step fluorinated graphene as dielectrics

In this study, we perform a top gate field effect transistor by using the integration of novel materials such as graphene as active channel and fluorinated graphene as dielectrics on flexible Polyethylene terephthalate (PET) substrate. These device shows high carrier mobility (~969 cm
²
/v.s) at a drain bias of +0.5V. It shows good mechanical flexibility and electrical stability after bending measurement under modest strain upto 15% with different bending cycles. This result reveals the benefits of using 2D material that is graphene and fluorinated graphene for flexible electronics devices.