4-Point-bending characterization of interfacial adhesion strength of SiN/Cu film stack

In this study, a comparison of the interfacial adhesion strength of Plasma Enhanced Chemical Vapor Deposition (PECVD) silicon nitride (SiN)/Cu and High-Density Plasma Chemical Vapor Deposition (HDP CVD) SiN/Cu was performed using the 4-Point-Bending (4PB) technique. Differences in critical energy release rate value Gc, which is an indicator of the interfacial adhesion strength, were observed. The energy released depends on the Cu/SiN pre-treatment, SiN film thickness as well as the film deposition method.