The microstructure and texture of Ge2Sb2Te5 thin films for phase change memory

In the present study, Ge
₂
Sb
₂
Te
₅
thin films have been deposited on Si (100) substrate by magnetron sputtering. We investigated microstructure and texture formation of Ge
₂
Sb
₂
Te
₅
thin films during annealing. Our characterization results show that face-centered cubic (fcc) rock-salt structure formed in 250 °C annealed thin films, and both fcc and close-packed hexagonal (hcp) structure exist in 350 °C annealed thin films, proved phase transformation during annealing process. Moreover, texture research demonstrated that {100} fibre texture developed in fcc structure Ge
₂
Sb
₂
Te
₅
thin films. In addition, the observation by transmission electron microscope (TEM) illustrated the results on structural arrangement of fcc structure Ge
₂
Sb
₂
Te
₅
thin films. Therefore, this work will provide advices on finding the rapid conversion mechanism of phase change materials.