High temperature nanoprobing application for SRAM soft failure fault isolation

SRAM is a major component in semiconductor industry which often requires extensive and exhaustive method of fault isolation, especially for a non-visual defect in a soft failure mode. For these cases, nanoprobing on CA layer is often performed but there are times when it fails to isolate any defect. One reason may be because the failure only occurs at high temperature test environment. This paper will discuss the effectiveness of high temperature nanoprobing for SRAM soft failure fault isolation. 3 different case studies result from 3 similar SRAM devices which failed at high temperature test environment will be analyzed in this paper.