Design and characterization of a wideband high-dynamic range SiGe cryogenic low noise amplifier

The design and characterization of a cryogenic SiGe HBT low-noise amplifier optimized for high dynamic range is presented. The design leverages cryogenic SiGe HBT models capable of simultaneously describing weak nonlinearity, noise, and small-signal performance. The integrated circuit was realized in the Global Foundries 0.12 μm BiCMOS 8HP technology platform and operates from 1-20 GHz. When biased at a power consumption of 60 mW and operated at a physical temperature of 17 K, the amplifier provides an average gain and SFDR of 23 dB and 60 dB/GHz, respectively. To the best of the authors' knowledge, this is the highest SFDR achieved by a wideband integrated circuit LNA at cryogenic temperatures.