D-band low-noise amplifier MMIC with 50 % bandwidth and 3.0 dB noise figure in 100 nm and 50 nm mHEMT technology

We present the development of a wideband low-noise amplifier MMIC in the D-band with a smart combination of coplanar transmission lines and active devices to minimize noise figure. The identical three-stage LNA has been realized in metamorphic HEMT technologies with 100 nm and 50 nm gate length. The 50 nm LNA MMIC achieves a linear gain of 30.8 dB together with a bandwidth of 67 GHz up to 164 GHz and a noise figure of 3.0 dB. The performance of 100 nm LNA is slightly worse.