Bilayer Pseudospin Junction Transistor (BiSJT) for “Beyond-CMOS” Logic

A novel beyond-CMOS device concept, the Bilayer pseudoSpin Junction Transistor (BiSJT), is proposed. Like the previously proposed Bilayer pseudoSpin FET (BiSFET), the BiSJT is motivated by the possibility of interlayer electron-hole exciton condensation in bilayer 2-D material systems, and could provide switching energies of a few 10 s of zJ, orders of magnitude below even end-of-the-roadmap CMOS. The BiSJT is, however, current-controlled, and may allow for simpler device design, smaller device area, and more flexible gate design.