CMOS-Compatible Contacts to n-InP

In the context of the development of silicon photonics, various Ti- and Ni-based alloyed metallizations have been investigated for the purpose of forming low resistivity and Si CMOS-compatible contacts to n-InP. The innovative Ni
₂
P metallization combined with an in situ Ar
⁺
preclean represents the most suitable available solution for the formation of ohmic contacts with a specific contact resistivity as low as 4.3 × 10
^-6
Ω.cm
²
on such a semiconductor. The latter additionally presents the advantage of being stable at least up to 350 °C and could therefore withstand additional integration processes conducted at this temperature.