A new fabrication method of RF interposer applied in the integration of band pass filter in the frequency range of X band

Thin silicon or glass interposer provide a way to highly integrated microsystems [1]. In this work, we present a novel wafer-level fabrication method of RF interposer applied in the integration of band pass filter in the frequency range of X band. In order to reduce the insertion loss caused by parasitic effects in the substrate, a special designed TSVs transmission structure (a core TSV and six shielding TSVs) and 300μm high-resistivity silicon (3000 Ω·cm) are adopted. The microstrip line is used to transmit high-frequency signal in packaging structure. A band pass filter working in the frequency range of X band is planned to be integrated with the interposer.