Design of super compact bandpass filter using silicon-based integrated passive device technology

In this paper, a compact third-order bandpass filter with Chebyshev characteristic is designed by using integrated passive device (IPD) technology. The filter is capacitively coupled and consists of three parallel resonators. The simulation results show that the center of the filter Frequency of 1700MHz, bandwidth of 500MHz, the volume is only 1.0mm*0.5mm*0.3mm.