Simulation of the temperature field for bonding IGBT chip and DBC substrate using Al/Ni self-propagating foil

Junction temperature of the IGBT chip is 200 °C. IGBT chip would be damaged by high temperature and long-time heating in reflow or nanosilver sintering process. Therefore, Al/Ni self-propagating foil was investigated as a heat source to bond IGBT chip and DBC substrate for a short affecting time and small thermal damage on the chips. In this paper, finite element method was used to simulate the soldering process. The heat releasing process of the Al/Ni foil was simulated by the moving heat resource. Also the non-Fourier heat conduction law was implied to calculate heat transfer. By changing the bonding structure with different thickness of solder layers, boundary condition and solder materials, the highest temperature at the operating area of IGBT chip can be controlled under junction temperature during the soldering process.