3.3 V MSM-TIA for Gigabit Ethernet

The paper describes a 3.3 V, monolithically integrated metal-semiconductor-metal photodetector (MSM-PD) and transimpedance amplifier (TIA) chip that is fully compliant with the Gigabit Ethernet receiver specification for the short reach application (IEEE 802.3z 1000BASE-SX). Key typical performance specifications are: -22 dBm sensitivity; 1200 MHz 3dB bandwidth; 1300 V/W differential responsivity and 120 mW power dissipation at 3.3 V. The chip is fabricated in a production 0.5 /spl mu/m gate length GaAs MESFET technology and is packaged in a TO-46 header with a flat window and a ball-lens cap option.