Novel polarization beam splitter based on p-i-n structure for an indium phosphide platform

In this paper, a polarization beam splitter (PBS) based on the indium phosphide (InP) platform is presented. The main advantage of the device is that the tight fabrication tolerances of fully passive devices can be overcome by adjusting two voltages in an easy calibration. To produce the splitting function, the Pockels effect and the plasma dispersion effect are exploited in the phase shifters of a symmetric 1×2 Mach-Zehnder interferometer (MZI). The experimental results show that such a device operating at 1550 nm has an on-chip loss of 3.5 dB and a polarization extinction ratio better than 15 dB.