Strain-Induced Armchair Graphene Nanoribbon Resonant-Tunneling Diodes

The electronic properties of armchair graphene nanoribbons (AGNRs) can be changed and modified under the uniaxial strain. Taking this advantage, we propose a new platform of AGNR-based resonant-tunneling diode (RTD) using the effects of strain for the first time. In this RTD platform, barrier regions are composed of strained AGNR, whereas channel is made up by pristine AGNR. The calculated results show that the double barrier quantum well is performed for such device, and negative differential resistance property appears in I-V characteristic. In addition, performance of strain-induced 12-AGNR-RTD is explored under the variation of strain percentage (ε). It is realized that the efficiency of such devices consist of peak to valley ratio can be engineered by setting strain percentage (ε) to appropriate orders. Tight binding model coupled with nonequilibrium Green's function formalism is derived for this paper.