Design of RCD snubber considering wiring inductance for MHz-switching of SiC-MOSFET

The RCD (Resistor-Capacitor-Diode) snubber is usually designed without considering which wiring inductance seriously affects circuit behaviors, although the influence appears significantly at high-frequency operation. We investigate an optimal design of the RCD snubber for MHz-switching of SiC-MOSFETs considering location of parasitic wiring inductance. The mechanism of ringing induced by wiring inductance, and ringing suppression by the RCD snubber are also discussed. The wiring inductance near the gate and source terminals should be minimized. The wiring inductance near the gate and drain terminals must be considered to design an optimal RCD snubber.