Abstract:
In this paper, the structural model and the physical model of GaAs-based BIB THz detectors are constructed by means of numerical simulation. The effect of acceptor concen...Show MoreMetadata
Abstract:
In this paper, the structural model and the physical model of GaAs-based BIB THz detectors are constructed by means of numerical simulation. The effect of acceptor concentration on the dark current characteristics is investigated. Additionally, the optimal acceptor concentration corresponding to the maximum detectivity has been discussed from the application point of view.
Published in: 2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Date of Conference: 24-28 July 2017
Date Added to IEEE Xplore: 14 August 2017
ISBN Information:
Electronic ISSN: 2158-3242
Contents 