Characterization of Finite-Width Ground Coplanar Waveguides on High Resistivity Silicon With Ultralow Metallization Thickness

In this paper, we report the microwave properties of finite-ground coplanar waveguides (CPWs) fabricated on a thermally oxidized high resistivity silicon substrate. The ultralow metallization thickness indicates a gold metallization with a thickness in the range from 10 to 100 nm. We present measured magnitudes and phases of the S
₁₁
and S
₂₁
parameters of the CPW segments in the frequency range from 0.1 to 26 GHz, which are transformed based on the signal flow graph to the characteristic impedance Z0, the attenuation coefficient α, and the effective dielectric constant εeff. We analyze the CPW attenuation dependence on the metallization thickness based on the α( f ) = α
₀
· ( f/1 GHz)
ⁿ
model.