Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage

For devices with a 15 micron anode-tocathode distance, nearly 1.5 times increase in the blocking (breakdown) voltage (from 692 to 1030 V ) has been achieved by replacing the alloyed Ohmic contact at the anode electrode of the conventional MOS gated hybridanode lateral field-effect rectifier (CMLFER) with a low barrier Schottky contact. The new Schottky-MOS hybrid-anode lateral field-effect rectifier is found to offer comparable low onset voltage (V
_ON
of 0.68±0.13 versus 0.65±0.11 V for CMLFER) independent of the anode-tocathode distance. The immunity of the punch through caused by drain induced barrier lowering effect is obtained through the low barrier Schottky contact in anode, which is believed to be responsible for the reduction in the leakage current, and the improvement of rectifier breakdown voltage.