A Versatile and Accurate Compact Model of Memristor With Equivalent Resistor Topology

Memristor appeals to a wide research field as the fourth passive element, and its model has been a necessary topic for future circuit applications. In this letter, a novel compact model of memristor, based on the equivalent resistor topology of variable conductive filaments, is presented. Since the formation and annihilation of conductive filaments is a natural mechanism of mainstream memristor, the model is essential and so more accurate than those nonlinear dopant drift models. On the other hand, the equivalent resistor idea makes our model versatile and efficient comparing with some complex physical process methods, and fulfills the requirements of circuit design. The versatility and accuracy of our compact model have been verified by the results that it can reduce at least 30% error in a Pt/TiO
₂
/TiO
_2+x
/Pt type memristor and at least 20% error in a Ta/TaO
_x
/Pt type memristor, comparing with some popular models. Moreover it is easier to be implemented in Verilog-A, which possesses more flexibility and higher applicability in circuit design.