The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs

The basic analog parameters of three splits of In
_x
Ga
_1-x
As nTFETs are analyzed for the first time. The first two splits are In
_0.53
Ga
_0.47
As devices with a 3-nm HfO
₂
/1-nm Al
₂
O
₃
and a 2-nm HfO
₂
/1-nm Al
₂
O
₃
, while the last one is an In
_0.7
Ga
_0.3
As channel with a 3-nm HfO
₂
/1-nm Al
₂
O
₃
gate. The low equivalent oxide thickness improves the electrostatic coupling, enhancing IDS, and, consequently, also gm and A
_V
, especially for higher VGS. The InGaAs tunnel field-effect transistors (TFETs) show compatible performance with Si TFETs, and have better performance than Si MOSFETs, making them useful for low-power and low-voltage analog applications. The highest efficiency is found using the combination of a 2-nm HfO
₂
with In
_0.53
Ga
_0.47
As, due to the 56-mV/dec subthreshold swing obtained. For all splits, the A
_V
peak can be related to the VGS necessary for band-to-band tunneling to become the dominant transport mechanism.