New Resin Materials for High Power Embedding

The next generation of switches for power electronics is based upon Wide Band Gap semiconductors (WBG), e.g. GaN or SiC. These materials are supporting the possibility of higher switching currents and high frequency applications. Wide band gap semiconductors enable high voltage and high temperature applications. Power electronics need an optimized low inductive commutation cell for reducing the switching losses. For these reasons a bond-less PCB embedding technology was developed. But so far, a compatible high temperature resin material wasn't available and ceramics or lead frame solutions are state of the art. The present work shows the first results of a new resin material with a Tg > 200°C (~400°F) in combination with a high temperature PCB (Printed Circuit Board) embedding technology. Based on the resin material properties, the possibility of SiC and GaN embedding into the new resin will be discussed and first test results will be shown.