Graphene field effect transistors with optimized contact resistance for current gain

We present GFETs based on low contact resistance of 125 ohm·μm. High current gain was obtained with extrinsic ft of 35 GHz and an intrinsic ft of 100 GHz for device with 180 channel length and 12 μm channel width. The high RF performance together with our bottom-gate structure (graphene is on top and exposed to ambient), provide an opportunity for applications such as optoelectronic components and high frequency sensors.