Low-Temperature Characterization of Cu–Cu:Silica-Based Programmable Metallization Cell

In this letter, low-temperature characterization of Cu-Cu:silica programmable metallization cells (PMC) is presented. Our results show that the PMC device is functional even at 4 K and that the low resistance state is essentially unaffected by temperature whereas the high resistance state increases with decreasing temperature. A direct tunneling model is applied to explain the temperature independent low-resistance state.