Block copolymer lithography and transferred patterns on the substrate used for SERS

The hexagonally ordered patterns by self-assembly of block copolymer with diameter and spacing down to 23 nm and 15 nm, respectively, are capable of producing Si nanopores with high aspect ratio from patterned Au film. The etching feature size seriously depends on the block copolymer pattern template. The prepared nanostructure patterns were used as substrates for surface enhanced Raman spectroscopy (SERS). Results show that the Raman peak intensity of copolymer patterns and etched Si nanopores are 8 times and 30 times, respectively, greater than that of the flat one using R6G as medium.