Study of DC sputtered SnO growth and its applications in thin film transistors

In this work, p-type SnO thin films by DC sputtering at low temperature and TFT structures were fabricated. A probable process window of sputtering atmosphere of a mixture of Ar-O
₂
was found for SnO TFTs application. Fabricated-type SnO TFTs with Ion/Ioff of 5×10
³
and mobility of 0.17 cm2/V·s on Al
₂
O
₃
dielectrics were fabricated. An unusual drain current shake in subthreshold field was found and more measurements and analysis should be carried out to explain this phenomenon.