Plasma enhanced atomic layer deposition of molybdenum oxide from Mo(CO)6 and O2 plasma for 2D electronic device application

This work is focused on synthesis of molybdenum oxide (MoO
₃
) by Plasma Enhanced Atomic layer deposition (PEALD) using molybdenum hexacarbonyl (Mo(CO)
₆
) is selected as precursor for Mo and O
₂
is adopted as precursor for plasma. Ex-situ growth characterizations were carried out by X-ray reflectivity (XRR), scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XRR result indicates the linear growth of the thin films. While amorphous as-deposited film was observed by XRD. XPS and SEM was applied to further analyze the quality of the film. The growth of MoO
₃
can be layer controllable and have good film continuity. There merits are helpful in further synthesis of MoS
₂
by sulfurization.