Investigation of thermal runaway of reverse-biased silicon carbide schottky barrier diode

SiC devices are expected to operate at much higher temperature than Si devices. However, commercially available SiC devices are limited to the temperature almost same as Si devices. In order to operate SiC devices at high temperature, it is necessary to improve package technology and to design SiC devices properly for high temperature. In this study, robustness against thermal runaway of SiC-SBD is evaluated. SiC-SBD with a heat-sink is thermally stable, and can operate even at T
_a
= 250 °C without thermal runaway.