Creation and study of memristors based on CuCl2

This article describes a method of creating crossbar structures based on copper chloride and results of research such structures. It is shown that the obtained elements have a memristor properties. The used compound can provide better operation speed of elements in comparison with the materials studied earlier. The switching voltages of the investigated structures were 0.2 V and -0.25 V. Measured values of the number of switching and stability characteristics show that memristors can compete with modern silicon devices in the field of computer memory.