Junction-barrier Schottky diodes fabricated with very thin highly Mg-doped p+-GaN(20 nm)/n-GaN layers grown on GaN substrates

Low turn-on voltage junction barrier Schottky (JBS) diodes were fabricated using very thin (20 nm) and extremely highly Mg doped (2×10
²⁰
cm
⁻³
) p
⁺
-GaN layer placed on top of n
⁻
-GaN epitaxial layers grown on n-GaN substrates. By omitting p-GaN layers in conventional p
⁺
-GaN/p-GaN/n
⁻
-GaN vertical p-n junction diodes, device processing has been eased and low specific on-resistances (R
on
<0.3 mΩcm
²
) have been obtained.