Spin-Valve Junction With Transfer-Free MoS2 Spacer Prepared by Sputtering

The prospects of spintronic devices based on 2-D materials originate from their outstanding spin-related properties. Fabrication of such devices typically involves transfer processes that yield inferior interfaces due to trapped contaminants or cavities at 2-D material/electrode interfaces. Here, we report a transfer-free fabrication process of MoS
₂
films by RF magnetron sputtering, and demonstrate its application in the La
_0.7
Sr
_0.3
MnO
₃
/MoS
₂
/Ni
_0.8
Fe
_0.2
spin-valve structure. The Raman spectroscopy shows E
_2g
and A
_1g
vibration modes of MoS
₂
, suggesting the growth of crystalline MoS
₂
layers. A giant magnetoresistance ratio of 0.8% at 20 K was observed. The results suggest a scalable route for fabricating MoS
₂
-based electronic and spintronic devices with a transfer-free process for obtaining reliable contacts.