A high-quality resonant pressure micro sensor with through-silicon-via electrical interconnections

This paper reports a high-Q resonant pressure micro sensor with through-silicon-via electrical interconnections. Double “H” type resonators were arranged in a differential pressure sensor where the pressure under measurement was translated to resonant frequency output. The resonators were vacuum packaged through anodic bonding, which produced a high Q factor of the resonators. In order to avoid the failure of vacuum packaging, a through-silicon-via technology was developed to achieve the wire interconnections. Experimental results showed that the Q-factor of the resonator was higher than 37000. The differential sensitivity was quantified as 84.36 Hz/kPa, and the linear correlation coefficient was 0.9998 in the pressure range of 20 kPa~260 kPa.