Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N/sub 2/O oxidation of NH/sub 3/-nitrided Si

In this paper, we report ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NH/sub 3/ nitridation of Si followed by in-situ N/sub 2/O oxidation (NH/sub 3/+N/sub 2/O process). These films show excellent interface properties, significantly lower leakage current (/spl sim/10/sup 2//spl times/), enhanced reliability, and superior boron diffusion barrier properties compared with SiO/sub 2/ of identical thickness.