Extracting parasitic inductances of IGBT power modules with two-port S-parameter measurement

Parasitic inductances of IGBT power modules have a major influence in device operation and circuit performance. They often incur negative effects such as switching oscillations, EMI, extra power losses and stress on the devices. This paper proposes a technique to extract parasitic inductances of IGBT power modules based on two-port scattering (S) parameter measurement. Accurate values of the internal parasitic inductances can be obtained through a step by step analysis using the measured S-parameters. The new approach is experimentally validated with a case study of a commercial 600V IGBT half-bridge power module.