Statistical Monte Carlo simulation for dielectric breakdown of oxide thin films: effect of nonuniformity of electron trap generation

This paper introduces a new simulator to investigate the statistical characteristics of dielectric breakdown of silicon dioxide thin films in MOSFETs. Breakdown phenomena are well simulated using the percolation concept. Simulations are carried out taking account of various effects which are physically probable, and statistical properties of simulated breakdown phenomena are studied applying Weibull statistics. A new plotting method is also proposed which is very useful to determine what physical effects are accelerated by specific process conditions. Finally, we evaluate the effects of oxynitridation process on dielectric breakdown mechanisms.