Evaluation of excess interstitial silicon amount using delta-doped boron markers grown by UHV-CVD

Interstitial-silicon emission from {311} defects during postannealing after Si self-implantation was investigated using boron delta-doped marker layers epitaxially grown by ultrahigh-vacuum chemical vapor deposition. The amount of excess interstitials which remain after interstitial-vacancy recombination at early stage of postannealing after various implantation conditions was also evaluated. The amount of excess interstitials was nearly independent of implantation dose and energy, but greatly depended on implant species. A larger number of interstitials was found for implantation of arsenic than for implantation of silicon or boron.