A Damping Scheme for Switching Ringing of Full SiC MOSFET by Air Core PCB Circuit

In this paper, a resonant damping circuit to suppress the switching ringing of full SiC mosfet is proposed. It reveals that the ringing phenomenon caused by parasitic impedances of switching circuit can be damped out using air core PCB transformer which has a properly designed secondary side circuit. The design method for PCB transformer and the secondary circuit are developed considering the physical dimension applied to the PCB transformer inserted between full SiC mosfet module and snubber capacitor. Experimental results using 1200 V-180 A full SiC mosfet module validate the design method and the performance of the proposed air core PCB circuit. Thanks to the damping circuit, the resonant component due to the switching ringing has been reduced to a half compared to that of system without damping circuit.