Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET

This paper proposes a simple and efficient method to improve hot carrier (HC) immunity of p-channel LDMOSFET without degrading typical figure of merits such as breakdown voltage BV and specific on-resistance R
_sp
. The superiority of a novel STI-based p-channel LDMOSFET with a hot electron cooling (HEC) layer against the conventional method to improve HC immunity (i.e. extending the p-drift length) is confirmed by TCAD simulation.