Noise parameters of GaAs pHEMTs at K, V and W bands: Measurement peculiarities and modeling

DC, RF and noise parameters of GaAs pHEMTs with 100 nm gate length and widths (μm) of 2×10, 2×15, 2×25, 2×50, 2×75, 4×50 were investigated with the focus on test structure with gate width of 2 × 50 µm. Using a Maury Microwaves ATS system in the 8–50 (K, K
a
), 50–75 (V) and 75–110 GHz (W) frequency band, the noise parameters were measured and calculated employing the Y-Factor method. The sources of measurement uncertainties are discussed. Very good repeatability the measured minimum noise figure (NF
min
) over gate-source bias (V
GS
) and scattered but very repeatable data over frequency were observed. Measured s-and noise parameters are analyzed with the Angelov compact model and also with small-signal model.