Low Frequency Noise in advanced 55nm BiCMOS SiGeC Heterojunction Bipolar Transistors: Impact of collector doping

In this work we present the first Low Frequency Noise results obtained on the new 55 nm BiCMOS technology developed by STMicroelectronics. With this improved technology at higher integration level, SiGe:C Heterojunction Bipolar Transistors will address High Speed & High Data Rate communication systems and smart mobility integrated circuits involved in the future fully automated transportation systems. The LF Noise measurements are performed in the 1Hz-100 kHz frequency range as a function of the base bias current and of the emitter area A
_E
. DC and Low Frequency Noise characteristics are presented on three collector HBTs architectures. In these structures, the collector doping varies in order to propose different output powers. The best 1/f noise figure of merit K
_B
is found to be close to 4 10-10 μm
²
. This value represents a very good one but do not reach the best results obtained in the mature previous 0.13μm BiCMOS technology.