Comparison of mask writing tools and mask simulations for 0.16 /spl mu/m devices

The impact of mask corner rounding on the quality of pattern reproduction for deep submicron devices is investigated. Of particular interest is the resolution of very small OPC (optical proximity correction) features (serifs) used to reduce line end shortening of the photoresist. Mask rounding was simulated and compared to SEM images of the chrome written with different tools. The effect was investigated for two types of SRAM cells, based on design features such as line ends, inside and outside corners, staircases, and contact holes.