Simulation of electrophysical parameters of multilayer barrier homo- and heterostructures based on non-crystalline semiconductors

This work is related with development of a physical model of potential barriers in semiconductor structures based on non-crystalline semiconductors. This model will help to analyze multilayer semiconductor barrier structures and calculate their electrophysical characteristics. The model describes physical processes occurring during barrier formation, characteristics of space charge region (SCR) depending on parameters on semiconductors. The results of simulated characteristics of the double-cascade solar cell based on a-Si:H and a-SiC:H.