Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n+/p Shallow Junction

Effects of hot phosphorus (P) implantation on the NiGe-contacted Ge n+/p junction are studied in this work. At an adequately high ion-implantation temperature (150°C), the P depth profiles of the hot-implanted samples are similar to that of the room-temperature implanted ones. Hot P implantation is demonstrated effectively in reducing ion implantation induced defect formation and suppressing nickel atoms diffusion. Therefore, hot P implantation is efficient in lowering junction leakage and excellent junction characteristics exhibiting ~1 × 10
⁶
J
_ON
/J
_OFF
ratio is achieved.