Low-divergence single-mode ridge waveguide diode lasers

Ridge waveguide laser diodes of a GaAs-AlGaAs separate-confinement graded-index monolithically stacked triple-quantum-well structure have been fabricated. Chemically assisted ion beam etching (CAIBE) was used to etch a 4- mu m-wide mesa which serves as the waveguide for the device. Results for 4- mu m-wide by 600- mu m-long optically coated devices are presented. Single-longitudinal mode, CW output power in excess of 90 mW and a far-field divergence of 21 degrees *3.5 degrees are demonstrated.<
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