Sub-THz source integrated in low-cost Silicon Photonic technology targeting 40 Gb/s wireless links

Following the race for transmitting/receiving at higher data rate, we can observe intensive development of millimeter-wave wireless systems in low-cost CMOS technology. Data rates above 10 Gb/s are now targeted in order to address the data traffic bottleneck of backhaul links for the 5G wireless network. To do so, antenna-systems operating at sub-THz frequencies show great potential, leveraging high-performance photonic technology. This paper presents a sub-THz source based on a SiGe PIN photodiode integrated in low-cost Silicon Photonic technology. Using a laser beat-note, the photodiode delivers an output power ranging from -20 dBm to -29 dBm between 125 and 325 GHz. Leveraging this wide operating band, data rate exceeding 40 Gb/s can be targeted.