Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal

We report on Atomic Layer Deposition Titanium (ALD Ti) for FinFET source/drain contact applications. On planar test structures, we accurately benchmark contact resistivity (ρc) of ALD Ti, ~1.4 × 10-9 Ω · cm
²
on Si:P and ~2.0 × 10-9 Ω·cm
²
on SiGe:B, among to lowest reported values in literature. Ultralow ρc is resulting from enhanced Ti/Si(Ge) reactivity originating in the ALD process. We also demonstrate capability of this process to significantly lower Rc on FinFETs by allowing a lateral contact into the S/D area effectively maximizing the contacting area.