A Ku-Band LNA in 0.35-µm SiGe BiCMOS technology

This paper presents a Ku-Band low-noise amplifier using 0.35-μm SiGe BiCMOS technology. An inductively degenerated common-source topology combined with floating-body transistors are used to improve the noise figure of the LNA. The simulation results show that this 3-stage LNA achieves 3.2 dB minimum noise figure and 18.5 dB power gain over 12-18 GHz. An output P
_1dB
of 8.6 dBm is obtained at 15 GHz. And the core area of this LNA is only 0.65×0.40 mm
²
excluding testing pads.