Modeling of a Back-Gated Monolayer MoS2 FET by Extraction of an Accurate Threshold Voltage and Gate-Bias-Dependent Source/Drain Resistance

Fabrication and characterization of MOSFETs having monolayer channels comprised of the transition metal dichalcogenide molybdenum disulfide (MoS
₂
) are active areas of research. In this paper, we show that a simple and traditional MOSFET model, when including an accurate threshold voltage and gate-bias-dependent source/drain resistance, achieves a good visual fit to our measured data, in the linear regime, for a back-gated monolayer MoS
₂
FET. A four-point probe measurement technique is utilized to extract the accurate threshold voltage and gate-bias-dependent source/drain resistance implemented in the model.