FDSOI MOSFET threshold voltage characterization based on AC simulation and measurements

A method for extraction of the threshold voltage corresponding to the front and back interface in FDSOI MOSFETs is proposed. The approach is based on the nonlinear behavior of the capacitances between the source and front/back gate. The method has been discussed using the numerical simulation results and has been demonstrated using the C-V characteristics of the experimental FDSOI devices manufactured in ITE.