Quantum confined model for a novel tri-material gate stack engineered double gate MOSFET

The purpose of this research effort is to develop a numerical model for a novel tri-material, gate stack engineered double gate MOSFET considering quantum confinement. While developing this model a combination of 2-D Poisson's equation and 1-D Schrodinger equation was used to obtain the potential profile and inversion charge across the complete silicon film. The proposed DG MOSFET structure has been implemented using Silvaco Atlas 2-D numerical device simulator to obtain the results for transfer characteristics, output characteristics and mobility variation. The results obtained indicate a trend of reduction in mobility and drain current while considering the quantum confined model of the device in comparison to the classical one.